标题： 使用植入μ子观察分子纳米磁体中的能级交叉 显示英文标题

标题： Observation of a level crossing in a molecular nanomagnet using implanted muons

摘要： 我们使用μ子自旋弛豫观察到了分子纳米磁体（MNM）中的电子能级交叉。 这种效应在之前的几项MNM系统μ子研究中尚未被观察到，这进一步证明了植入的μ子的自旋弛豫对电子自旋的动力学敏感。 我们的测量结果在破损环 MNM [H_{2}N^{t}Bu^{是}Pr][Cr_{8}CdF_{9}(O_{2}CC(CH_{3})_{3})_{18}]（以下简称 Cr_{8}Cd）中进行，该物质包含八个 Cr 离子，显示出在 B_{c}=2.3 T 时 S=0 到 S=1 转变的明确证据。该交叉现象表现为平均正电子不对称性的类似共振的凹陷，同时也体现在μ子自旋弛豫率中，在转变时幅度急剧增加，并在 S=1 区域内出现一个峰值。 显示英文摘要

摘要： We have observed an electronic energy level crossing in a molecular nanomagnet (MNM) using muon-spin relaxation. This effect, not observed previously despite several muon studies of MNM systems, provides further evidence that the spin relaxation of the implanted muon is sensistive to the dynamics of the electronic spin. Our measurements on a broken ring MNM [H_{2}N^{t}Bu^{is}Pr][Cr_{8}CdF_{9}(O_{2}CC(CH_{3})_{3})_{18}] (hereafter Cr_{8}Cd), which contains eight Cr ions, show clear evidence for the S=0 to S=1 transition that takes place at B_{c}=2.3 T. The crossing is observed as a resonance-like dip in the average positron asymmetry and also in the muon-spin relaxation rate, which shows a sharp increase in magnitude at the transition and a peak centred within the S=1 regime.