标题： STM成像杂质共振在Bi$_2$Se$_3$ 显示英文标题

标题： STM imaging of impurity resonances on Bi$_2$Se$_3$

摘要： 在本文中，我们对Bi$_2$Se$_3$中缺陷附近的态密度进行了详细研究。特别是，我们提供了该系统中常见三角形缺陷的数据。虽然我们没有发现任何可测量的准粒子散射干涉效应，但我们确实发现了局域共振，一旦将势能扩展以正确考虑观察到的缺陷，这些共振可以很好地由理论拟合。数据和拟合结果确认了尽管在杂质附近由于低能共振态的产生，表面电子谱的狄拉克点附近的局部态密度显著受到破坏，但狄拉克点并未被局部破坏。我们根据拓扑绝缘体预期的保护表面态来讨论我们的结果。 显示英文摘要

摘要： In this paper we present detailed study of the density of states near defects in Bi$_2$Se$_3$. In particular, we present data on the commonly found triangular defects in this system. While we do not find any measurable quasiparticle scattering interference effects, we do find localized resonances, which can be well fitted by theory once the potential is taken to be extended to properly account for the observed defects. The data together with the fits confirm that while the local density of states around the Dirac point of the electronic spectrum at the surface is significantly disrupted near the impurity by the creation of low-energy resonance state, the Dirac point is not locally destroyed. We discuss our results in terms of the expected protected surface state of topological insulators.