标题： 栅控量子点在单层WSe2中 显示英文标题

标题： Gate controlled quantum dots in monolayer WSe2

摘要： 量子限制和对载流子的操控对于实现适用于量子技术的器件至关重要。 电子自旋与谷之间的相互作用，以及能够通过电学和光学方式操控其量子态的可能性，使得二维（2D）过渡金属二硫化物成为开发量子器件的一个新兴平台。 在本工作中，我们基于层状二维材料的异质结构制造器件，在其中实现了栅控的二硒化钨（WSe2）空穴量子点。 我们讨论了与WSe2器件通道中量子点出现相关的观测到的介观输运特性，并将其与理论模型进行比较。 显示英文摘要

摘要： Quantum confinenement and manipulation of charge carriers are critical for achieving devices practical for quantum technologies. The interplay between electron spin and valley, as well as the possibility to address their quantum states electrically and optically, make two-dimensional (2D) transition metal dichalcogenides an emerging platform for the development of quantum devices. In this work, we fabricate devices based on heterostructures of layered 2D materials, in which we realize gate-controlled tungsten diselenide (WSe2) hole quantum dots. We discuss the observed mesoscopic transport features related to the emergence of quantum dots in the WSe2 device channel, and we compare them to a theoretical model.