标题： 电子自局域化和临界点处的涨落态密度尾部 显示英文标题

标题： Electron self-trapping and fluctuation density-of-states tail at the critical point

摘要： 我们研究了由于电子与二阶相变或临界点处序参量涨落相互作用而引起的电子自俘获（例如，在磁性或铁电半导体的居里温度时）。 利用费曼路径积分方法，估算了自俘获能和自俘获态（涨落子）的大小。 结果表明，涨落子态与电子态密度的Lifshitz尾相连，此尾部的参数由临界指数决定。 显示英文摘要

摘要： We consider electron self-trapping due to its interaction with order-parameter fluuctuations at the second-order phase-transition or critical point (for example, at the Curie temperature in magnetic or ferroelectric semiconductors). Using Feynman path integral approach the autolocalization energy and the size of the self-trapped state (fluctuon) are estimated. It is shown that the fluctuon states are connected with the Lifshitz tail of the electron density-of-states, the parameters of this tail being determined by the critical exponents.