标题： 应变体HgTe拓扑表面态的量子霍尔效应 显示英文标题

标题： Quantum Hall Effect from the Topological Surface States of Strained Bulk HgTe

摘要： 我们报告了对三维、70 nm 厚的 HgTe 层的输运研究，该层通过在 CdTe 基底上的外延生长而受到应变。 应变在原本半金属的 HgTe 中诱导出一个能带隙，因此 HgTe 变成一个三维拓扑绝缘体。 在 mK 温度下，残余体载流子对带隙 HgTe 层的输运特性贡献可以忽略不计。 因此，该样品表现出由二维单锥狄拉克型拓扑表面态引起的量子化霍尔效应。 显示英文摘要

摘要： We report transport studies on a three dimensional, 70 nm thick HgTe layer, which is strained by epitaxial growth on a CdTe substrate. The strain induces a band gap in the otherwise semi-metallic HgTe, which thus becomes a three dimensional topological insulator. Contributions from residual bulk carriers to the transport properties of the gapped HgTe layer are negligible at mK temperatures. As a result, the sample exhibits a quantized Hall effect that results from the 2D single cone Dirac-like topological surface states.