标题： 新的外延石墨烯生长合成方法 显示英文标题

标题： New Synthesis Method for the Growth of Epitaxial Graphene

摘要： 作为一种可行的全碳后CMOS电子革命候选材料，外延石墨烯已引起广泛关注。 为了实现其应用潜力，需要可靠的方法来制造大面积单晶石墨烯区域。 本文报道了一种合成高质量外延石墨烯的新方法，即“面对面”方法。 样品的结构和形貌通过低能电子衍射、原子力显微镜、角度分辨光电子能谱和拉曼光谱进行表征。 生长的样品比通过传统热解吸生长的样品具有更好的质量和更大的长度尺度。 此外，可以通过改变退火温度轻松控制石墨烯的厚度。 显示英文摘要

摘要： As a viable candidate for an all-carbon post-CMOS electronics revolution, epitaxial graphene has attracted significant attention. To realize its application potential, reliable methods for fabricating large-area single-crystalline graphene domains are required. A new way to synthesize high quality epitaxial graphene, namely "face-to-face" method, has been reported in this paper. The structure and morphologies of the samples are characterized by low-energy electron diffraction, atomic force microscopy, angle-resolved photoemission spectroscopy and Raman spectroscopy. The grown samples show better quality and larger length scales than samples grown through conventional thermal desorption. Moreover the graphene thickness can be easily controlled by changing annealing temperature.