标题： 高度掺杂的Bi2Se3中量子霍尔效应和Shubnikov-de Hass振荡的观察：体载流子层状输运的证据 显示英文标题

标题： Observation of Quantized Hall Effect and Shubnikov-de Hass Oscillations in Highly Doped Bi2Se3: Evidence for Layered Transport of Bulk Carriers

摘要： Bi2Se3是一种重要的半导体热电材料，也是一种原型拓扑绝缘体。 在这里，我们报告在高掺杂的n型Bi2Se3中观察到Shubnikov-de Hass（SdH）振荡，同时伴随着量子化的霍尔电阻（Rxy），其体载流子浓度为几个10^19 cm^-3。 在倾斜磁场下的测量显示，磁输运表现出二维特性，其中只有磁场的c轴分量控制朗道能级的形成。 1/Rxy中的量子化台阶大小被发现与样品厚度成比例，平均约为每个五层结构（QL）e2/h。 我们表明，所观察到的磁输运特性不是来自样品表面，而是来自样品体作为多个并行的二维电子系统，从而产生多层量子霍尔效应。 除了揭示Bi2Se3的新电子性质外，我们的发现对拓扑绝缘体材料的电子输运研究也具有重要意义。 显示英文摘要

摘要： Bi2Se3 is an important semiconductor thermoelectric material and a prototype topological insulator. Here we report observation of Shubnikov-de Hass (SdH) oscillations accompanied by quantized Hall resistances (Rxy) in highly-doped n-type Bi2Se3 with bulk carrier concentrations of few 10^19 cm^-3. Measurements under tilted magnetic fields show that the magnetotransport is 2D-like, where only the c-axis component of the magnetic field controls the Landau level formation. The quantized step size in 1/Rxy is found to scale with the sample thickness, and average ~e2/h per quintuple layer (QL). We show that the observed magnetotransport features do not come from the sample surface, but arise from the bulk of the sample acting as many parallel 2D electron systems to give a multilayered quantum Hall effect. Besides revealing a new electronic property of Bi2Se3, our finding also has important implications for electronic transport studies of topological insulator materials.