标题： 纳米带互连中的传输特性，来源于通过化学气相沉积生长的石墨烯 显示英文标题

标题： Transport in Nanoribbon Interconnects Obtained from Graphene Grown by Chemical Vapor Deposition

摘要： 我们研究了通过化学气相沉积（CVD）生长的石墨烯获得的石墨烯纳米带（GNR）互连。 我们在1.7至900 K的宽温度范围内进行了低场和高场电气测量。室温迁移率范围为100至500 cm2/V/s，与从剥离石墨烯获得的GNR相当，表明在小于CVD石墨烯晶粒尺寸的器件中，体缺陷或晶界的作用很小。 在高场下，峰值电流密度受焦耳加热限制，但少量的热工程使我们能够达到约2 x 10^9 A/cm2，这是目前报道的纳米尺度CVD石墨烯互连中的最高值。 在约5 K以下的温度下，短GNR作为量子点起作用，其尺寸与其长度相当，突显了金属接触在限制传输中的作用。 我们的研究展示了CVD生长的GNR的机会，同时揭示了变异性及接触仍然是未来的挑战。 显示英文摘要

摘要： We study graphene nanoribbon (GNR) interconnects obtained from graphene grown by chemical vapor deposition (CVD). We report low- and high-field electrical measurements over a wide temperature range, from 1.7 to 900 K. Room temperature mobilities range from 100 to 500 cm2/V/s, comparable to GNRs from exfoliated graphene, suggesting that bulk defects or grain boundaries play little role in devices smaller than the CVD graphene crystallite size. At high-field, peak current densities are limited by Joule heating, but a small amount of thermal engineering allows us to reach ~2 x 10^9 A/cm2, the highest reported for nanoscale CVD graphene interconnects. At temperatures below ~5 K, short GNRs act as quantum dots with dimensions comparable to their lengths, highlighting the role of metal contacts in limiting transport. Our study illustrates opportunities for CVD-grown GNRs, while revealing variability and contacts as remaining future challenges.