标题： 侧向异质结 Sb2Te3/Bi2Te3 及其拓扑输运 显示英文标题

标题： Lateral Heterojunction Sb2Te3/Bi2Te3 and its topological transport

摘要： 一种拓扑绝缘体Sb2Te3/Bi2Te3的侧向异质结成功使用两步溶剂热方法合成。 当使用优化的工艺时，两个晶体组分通过一个尖锐的晶格匹配界面良好分离。 使用高分辨率透射电子显微镜检查异质结显示，外延生长发生在水平平面。 在低温下观察到整流曲线。 来自弱反局域化的量子修正揭示了拓扑表面态的输运。 因此，存在一个具有小结电压的阶梯状带隙侧向异质结，这为自旋滤波器和一维拓扑界面态提供了有吸引力的平台。 显示英文摘要

摘要： A lateral heterojunction of topological insulator Sb2Te3/Bi2Te3 was successfully synthesized using a two-step solvothermal method. The two crystalline components were separated well by a sharp lattice-matched interface when the optimized procedure was used. Inspecting the heterojunction using high-resolution transmission electron microscopy showed that epitaxial growth occurred along the horizontal plane. A rectification curve was observed at low temperatures. Quantum correction from the weak antilocalization reveals the transport of the topological surface state. There was, therefore, a staggered-gap lateral heterojunction with a small junction voltage, which is appealing for a platform for spin filters and one-dimensional topological interface states.