标题： 单层MoS$_{2}$中的应变诱导迁移率调制 显示英文标题

标题： Strain induced mobility modulation in single-layer MoS$_{2}$

摘要： 在本文中，研究了双轴和单轴应变对单层MoS$_{2}$在温度T$>$100 K时的迁移率的影响。考虑了来自本征声子模式、远距离声子和带电杂质的散射以及静态屏蔽。采用第一性原理模拟来研究应变对电子能带结构的影响，并使用线性化玻尔兹曼输运方程来评估各种应变条件下的低场迁移率。结果表明，迁移率随着沿扶手椅方向的拉伸双轴和拉伸单轴应变而增加。然而，在压缩应变下，当应变大小变化时，迁移率表现出非单调行为。特别是，相对于无应变条件，当有相对较小的1%压缩应变时，迁移率降低了约两倍，但当有较大的压缩应变时，迁移率部分恢复了这种退化。 显示英文摘要

摘要： In this paper the effect of biaxial and uniaxial strain on the mobility of single-layer MoS$_{2}$ for temperatures T $>$ 100 K is investigated. Scattering from intrinsic phonon modes, remote phonon and charged impurities are considered along with static screening. Ab-initio simulations are utilized to investigate the strain induced effects on the electronic bandstructure and the linearized Boltzmann transport equation is used to evaluate the low-field mobility under various strain conditions. The results indicate that the mobility increases with tensile biaxial and tensile uniaxial strain along the armchair direction. Under compressive strain, however, the mobility exhibits a non-monotonic behavior when the strain magnitude is varied. In particular, with a relatively small compressive strain of 1% the mobility is reduced by about a factor of two compared to the unstrained condition, but with a larger compressive strain the mobility partly recovers such a degradation.