标题： 基于自然存活的亚10纳米横向纳米线的GaN基超辐射发光二极管中的大激子结合能 显示英文标题

标题： Large excitonic binding energy in GaN based superluminescent light emitting diode on naturally survived sub-10 nm lateral nanowires

摘要： 我们展示了一种通过在沸腾的磷酸中湿化学蚀刻过程中自然选择形成的纳米线的新方法。 观察到在湿蚀刻过程中，亚10纳米的横向尺寸和700纳米或更长的长度已自然形成。 尺寸变化通过蚀刻时间进行控制，其根本原因是相邻晶体学六边形蚀刻坑的合并。 涉及激子的发射过程被发现是高效的，并导致增强的发射特性。 通过量子限制增强了激子结合能，从而加强电子-空穴波函数的重叠。 存活下来的纳米线几乎无缺陷，具有约45 meV的大激子结合能和输出电致发光光的小温度变化。 我们观察到由这些纳米线形成的LED的超辐射行为。 在电流密度达到400 A/cm2时没有可观测到效率滚降。 因此，本工作提供了一种在形成的纳米线上进行器件制造的创新且经济有效的方法，并证明了可立即实现的性能提升。 显示英文摘要

摘要： We demonstrate a novel method for nanowire formation by natural selection during wet chemical etching in boiling Phosphoric acid. It is observed that wire lateral dimensions of sub-10 nm and lengths of 700 nm or more have been naturally formed during the wet etching. The dimension variation is controlled through etching times wherein the underlying cause is the merging of the nearby crystallographic hexagonal etch pits. The emission processes involving excitons are found to be efficient and lead to enhanced emission characteristics. The exciton binding energy is augmented by using quantum confinement whereby enforcing greater overlap of the electron-hole wave-function. The surviving nanowires are nearly defect-free, have large exciton binding energies of around 45 meV and a small temperature variation of the output electroluminescent light. We have observed superluminescent behaviour of the LEDs formed on these nanowires. There is no observable efficiency roll off till current densities of 400 A/cm2. The present work thus provides an innovative and cost effective manner of device fabrication on the formed nanowires and proves the immediate performance enhancement achievable.