标题： 当前驱动的缺口坡莫合金纳米线中的畴壁去钉 显示英文标题

标题： Current Driven Domain Wall Depinning in Notched Permalloy Nanowires

摘要： 在本工作中，我们通过微磁模拟研究了缺口纳米线中的畴壁（DW）去钉行为。一个横向畴壁（TW）最初位于缺口中心，施加了1纳秒长度的电流脉冲，以相对于缺口尺寸s和线宽变化来去钉畴壁。我们观察到了去钉电流密度Jd，这是使畴壁逃离缺口的最小电流。发现去钉电流密度随着线宽和缺口尺寸的增加而减小。在去钉过程中，我们观察到畴壁的内部结构通常从TW转变为反涡旋壁（AVW）。有趣的是，对于s小于70纳米的情况，AVW在电流脉冲活跃期间紧密形成并去钉，而对于s大于70纳米的情况，AVW直到电流脉冲归零后才形成，并在翻转的TW形成后去钉。这可以解释为畴壁内部结构的转变受到自旋扭矩能量的影响，并有助于从缺口纳米线中畴壁的去钉行为。 显示英文摘要

摘要： In this work, we have investigated the domain wall (DW) depinning behavior in the notched nanowire by a micromagnetic simulation. A transverse domain wall (TW) was initially positioned at the center of notch and 1 ns length current pulse was applied to depin the DW with respect to the notch size s and the wire width variation. We have observed the depinning current density Jd which was a minimum current to escape DW from the notch. It was found that the depinning current density decreased as the wire width and the notch size increased. In the depinning process, we observed the inner structure of DW generally transformed from TW to anti-vortex wall (AVW). Interestingly, for the case of s less than 70 nm, AVW formed and depinned closely to the period when current pulse was active, while for s larger than 70 nm, AVW formed until the current pulse went to zero and then depinned after flipped TW was formed. It can be explained that the transformation of DW inner structures were affected by the spin torque energy and contributed to DW depinning behavior from the notched nanowires.