标题： 单电子通过量子点接触的输运 显示英文标题

标题： Single-electron Transport Through Quantum Point Contact

摘要： 在这里，我们采用数值方法研究量子点接触的输运和电导特性。 量子点接触是一种宽度与电子波长相当的狭窄结构，通过分割栅极或刻蚀技术在二维电子气（2DEG）中定义。 它们的特性已在实验中被广泛研究。 我们定义了一个基于量子霍尔效应的分割栅极量子点接触，具有标准栅极几何结构。 首先，我们通过在量化霍尔条件下对实际异质结构应用自洽的托马斯-费米方法，获得不可压缩条带（电流通道）的空间分布。 随后，求解注入到电流通道中的电子的时间依赖薛定谔方程。 在整数填充因子区域（{\nu }= 1）下，分析了输运特性和时间演化，考虑单个电子密度。 结果确认了在实际量子点接触中，电流方向可以通过外部干预进行控制。 显示英文摘要

摘要： Here, we employ a numerical approach to investigate the transport and conductance characteristics of a quantum point contact. A quantum point contact is a narrow constriction of a width comparable to the electron wavelength defined in a two-dimensional electron gas (2DEG) by means of split-gate or etching technique. Their properties have been widely investigated in the experiments. We define a quantum Hall based split-gate quantum point contact with standard gate geometry. Firstly, we obtain the spatial distribution of incompressible strips (current channels) by applying a self consistent Thomas-Fermi method to a realistic heterostructure under quantized Hall conditions. Later, time-dependent Schrodinger equation is solved for electrons injected in the current channels. The transport characteristics and time-evolutions are analyzed in the integer filling factor regime ({\nu} = 1) with the single electron density. The results confirm that the current direction in a realistic quantum point contact can be controllable with the external interventions.