标题： 射频溅射PMN-PT薄膜在LCMO缓冲铂化玻璃基底上的电学特性 显示英文标题

标题： Electrical properties of RF sputtered PMN-PT thin films on LCMO buffered platinized glass substrate

摘要： 铅基弛豫铁电薄膜由于在多个商业应用中的优异性能而具有技术重要性。 然而，这些材料的细微性和高制造成本一直是一个问题。 在这项工作中，对在LCMO缓冲层的铂化玻璃基底上生长的PMN-PT薄膜进行了系统研究。 这些薄膜是在室温下使用射频磁控溅射法生长的。 通过在空气中于550和650度C下退火2小时，可以获得单相PMN-PT薄膜。 在低于550度C下退火的薄膜和没有缓冲层的薄膜显示出存在pyrochlore。 研究了退火温度对PMN-PT薄膜的微观结构、介电和铁电性能的影响。 单相PMN-PT薄膜的扫描电子显微图显示，退火温度为550和650度C的薄膜具有双峰晶粒尺寸分布。 对于退火温度为650度C的薄膜观察到了高的介电常数1300和剩余极化(2Pr)为17微库仑/平方厘米。 显示英文摘要

摘要： Lead based relaxor ferroelectric thin films have been of technological importance due to excellent properties for several commercial applications. However subtleness and high cost of fabrication have plagued of these materials. In this work a systematic study of PMN-PT thin films grown on LCMO buffered platinized glass substrates has been undertaken. The films were grown at room temperature using RF magnetron sputtering. Single phase PMN-PT films could be obtained by exsitu thermal annealing in air for 2h at temperatures 550 and 650 degree C. The films annealed at temperatures lower than 550 degree C and films without buffer layer showed presence of pyrochlore. Effect of annealing temperature on the microstructure, dielectric and ferroelectric properties of the PMN-PT films has been investigated. Scanning electron micrographs of single phase PMN-PT films show a bimodal grain size distribution for films annealed at 550 and 650 degree C. A high dielectric constant of 1300 and a remnant polarization (2Pr) of 17micro C/cm2 were observed for film annealed at 650 degree C.