标题： 当前温度缩放用于具有非抛物能带色散的肖特基界面 显示英文标题

标题： Current-temperature scaling for a Schottky interface with non-parabolic energy dispersion

摘要： 在本文中，我们研究了窄带隙半导体和少层石墨烯中的肖特基输运，其中能量色散高度非抛物。 我们提出，在传统肖特基界面中的$J\propto T^2$与石墨烯基肖特基界面中的$J\propto T^3$的电流-温度标度关系的差异可以在窄带隙半导体的 Kane 的$\mathbf{k} \cdot \mathbf{p}$非抛物带模型下得到协调。 我们的新模型提出了$J\propto \left(T^2 + \gamma k_BT^3 \right)$的更一般形式，其中非抛物参数$\gamma$提供了从$T^2$到$T^3$标度的平滑过渡。 对于少层石墨烯，发现具有$N$层的石墨烯与$ABC$叠加方式遵循$J\propto T^{2/N+1}$，而$ABA$叠加方式则遵循一个与层数无关的普遍形式$J\propto T^3$。有趣的是，使用错误的缩放关系从阿伦尼乌斯图中提取的理查森常数与实际值相差两个数量级，这表明为了提取许多新型肖特基器件的重要特性，必须使用正确的模型。 显示英文摘要

摘要： In this paper, we study the Schottky transport in narrow-gap semiconductor and few-layer graphene in which the energy dispersions are highly non-parabolic. We propose that the contrasting current-temperature scaling relation of $J\propto T^2$ in the conventional Schottky interface and $J\propto T^3$ in graphene-based Schottky interface can be reconciled under Kane's $\mathbf{k} \cdot \mathbf{p}$ non-parabolic band model for narrow-gap semiconductor. Our new model suggests a more general form of $J\propto \left(T^2 + \gamma k_BT^3 \right)$, where the non-parabolicty parameter, $\gamma$, provides a smooth transition from $T^2$ to $T^3$ scaling. For few-layer graphene, it is found that $N$-layers graphene with $ABC$-stacking follows $J\propto T^{2/N+1}$ while $ABA$-stacking follows a universal form of $J\propto T^3$ regardless of the number of layers. Intriguingly, the Richardson constant extracted from the Arrhenius plot using an incorrect scaling relation disagrees with the actual value by two orders of magnitude, suggesting that correct models must be used in order to extract important properties for many novel Schottky devices.