标题： MoSe2/hBN/Ru(0001)异质结构中的带隙再归一化和功函数调节 显示英文标题

标题： Band gap renormalization and work function tuning in MoSe2/hBN/Ru(0001) heterostructures

摘要： 在这里，我们报告了通过分子束外延在Ru(0001)基底上的单层六方氮化硼(hBN)上成功生长MoSe2。 我们利用扫描隧道显微镜和谱学技术研究了MoSe2的电子结构。 令人惊讶的是，我们发现MoSe2在hBN/Ru上的准粒子带隙比在石墨烯或石墨基底上的要小约0.25 eV。 我们将这一结果归因于hBN/Ru之间的强相互作用，这导致了来自基底的残留金属屏蔽。 MoSe2的表面呈现出莫尔条纹，该条纹复制了hBN/Ru的莫尔条纹。 此外，MoSe2的电子结构和功函数被静电调制，幅度约为0.13 eV。 最有趣的是，这种静电调制在空间上与Ru(0001)表面上的hBN莫尔条纹相位一致，该表面也表现出相同幅度的功函数调制。 显示英文摘要

摘要： Here we report the successful growth of MoSe2 on single layer hexagonal boron nitride (hBN) on Ru(0001) substrate by using molecular beam epitaxy. We investigated the electronic structures of MoSe2 using scanning tunneling microscopy and spectroscopy. Surprisingly, we found that the quasi-particle gap of the MoSe2 on hBN/Ru is about 0.25 eV smaller than those on graphene or graphite substrates. We attribute this result to the strong interaction between hBN/Ru which causes residual metallic screening from the substrate. The surface of MoSe2 exhibits Moir\'e pattern that replicates the Moir\'e pattern of hBN/Ru. In addition, the electronic structure and the work function of MoSe2 are modulated electrostatically with an amplitude of ~ 0.13 eV. Most interestingly, this electrostatic modulation is spatially in phase with the Moir\'e pattern of hBN on Ru(0001) whose surface also exhibits a work function modulation of the same amplitude.