标题： 发射来自II型量子点的偏振各向异性 显示英文标题

标题： Polarization anisotropy of the emission from type-II quantum dots

摘要： 我们研究了由类型-II GaAsSb覆盖的InAs量子点发射的偏振响应。 基于在k.p框架中获得的单粒子态重叠积分计算的理论预测给出。 通过在具有类型-II限制的样品上进行偏振分辨光致发光测量来验证这一点。 我们表明，偏振各向异性可能用于确定空穴波函数的垂直位置及其相对于样品晶体学轴的方向。 提出了在信息科技中的应用方案，作为一种在通信波长下工作的室温光子门，以及一种简单的模型来估计类型-II GaAsSb覆盖的InAs QDs的精细结构分裂能量。 显示英文摘要

摘要： We study the polarization response of the emission from type-II GaAsSb capped InAs quantum dots. The theoretical prediction based on the calculations of the overlap integrals of the single-particle states obtained in the k.p framework is given. This is verified experimentally by polarization resolved photoluminescence measurements on samples with the type-II confinement. We show that the polarization anisotropy might be utilized to find the vertical position of the hole wavefunction and its orientation with respect to crystallographic axes of the sample. A proposition for usage in the information technology as a room temperature photonic gate operating at the communication wavelengths as well as a simple model to estimate the energy of fine-structure splitting for type-II GaAsSb capped InAs QDs are given.