标题： 电子输运在节点线半金属中 显示英文标题

标题： Electron transport in nodal-line semimetals

摘要： 我们研究带有电荷杂质的节点线半金属中的电导率。 此系统中库仑势的屏蔽与传统金属或半导体中发现的情况定性不同，屏蔽势$\phi$在距离$r$的广泛区间内按$\phi \propto 1/r^2$衰减。 这种不寻常的屏蔽导致了随温度、掺杂水平和杂质浓度变化的丰富的导电区域。 特别是，节点线半金属在化学势$\mu$趋于零的极限下表现出发散的迁移率$\propto 1/|\mu|$，电导率与温度呈线性增加的关系，$\sigma \propto T$，以及具有强烈各向异性磁场所依赖的大弱局域化修正。 显示英文摘要

摘要： We study the electrical conductivity in a nodal-line semimetal with charged impurities. The screening of the Coulomb potential in this system is qualitatively different from what is found in conventional metals or semiconductors, with the screened potential $\phi$ decaying as $\phi \propto 1/r^2$ over a wide interval of distances $r$. This unusual screening gives rise to a rich variety of conduction regimes as a function of temperature, doping level and impurity concentration. In particular, nodal-line semimetals exhibit a diverging mobility $\propto 1/|\mu|$ in the limit of vanishing chemical potential $\mu$, a linearly-increasing dependence of the conductivity on temperature, $\sigma \propto T$, and a large weak-localization correction with a strongly anisotropic dependence on magnetic field.