标题： 颗粒氧化物隔离CoPtCr薄膜的磁输运特性在未来的磁存储技术中的应用 显示英文标题

标题： Magnetotransport properties of granular oxide-segregated CoPtCr films for applications in future magnetic memory technology

摘要： 颗粒氧化物分离CoPtCr薄膜的磁输运特性通过体电阻和点接触电阻测量分别在宏观和微观长度尺度上进行了研究。 这种垂直磁性介质用于最先进的硬盘驱动器，如果与磁阻现象（用于读写操作）结合，可能会导致一种具有高面积密度的新型磁记录概念。 虽然薄膜的体测量显示直流电阻随施加磁场的变化很小（磁阻小于0.02%），但点接触测量揭示了电阻的巨磁阻类似变化，最大比率达到50,000%。 观察到的磁阻效应可以归因于具有不同矫顽力的CoPtCr颗粒之间的隧道磁阻。 我们颗粒介质中电子输运的隧道图像通过观察类似隧道的电流-电压特性以及磁阻的偏压依赖性得到了证实；发现点接触电阻和磁阻都随着施加的直流偏压而减小。 显示英文摘要

摘要： Magnetotransport properties of granular oxide-segregated CoPtCr films were studied on both macroscopic and microscopic length scales by performing bulk and point-contact magnetoresistance measurements, respectively. Such a perpendicular magnetic medium is used in state-of-the-art hard disc drives and if combined with magnetoresistive phenomena (for read/write operations) may lead to a novel concept for magnetic recording with high areal density. While the bulk measurements on the films showed only small variations in dc resistance as a function of applied magnetic field (magnetoresistance of less than 0.02 %), the point-contact measurements revealed giant-magnetoresistance-like changes in resistance with up to 50,000 % ratios. The observed magnetorestive effect could be attributed to a tunnel magnetoresistance between CoPtCr grains with different coercivity. The tunneling picture of electronic transport in our granular medium was confirmed by the observation of tunneling-like current-voltage characteristics and bias dependence of magnetoresistance; both the point-contact resistance and magnetoresistance were found to decrease with the applied dc bias.