标题： 基于范德华接触的InSe肖特基二极管 显示英文标题

标题： InSe Schottky diodes based on van der Waals contacts

摘要： 二维半导体由于其电学性能和强光-物质相互作用，是下一代电子和光电子器件的优秀候选材料。 为了制造具有最佳电学性能的器件，拥有高质量的半导体晶体和金属-半导体界面的理想接触至关重要。 得益于范德华晶体的机械剥离，可以在实验室中轻松获得原子层厚度的高质量单晶。 然而，传统的金属沉积技术可能会引入化学无序和金属诱导的中间能带态，导致费米能级钉扎并恶化金属-半导体界面，从而导致性能不佳的器件。 在本文中，我们研究了通过将机械剥离的InSe薄片堆叠到预先图案化的Au或石墨电极上而获得的Au-InSe和石墨-InSe范德华接触的电学接触特性，而无需光刻或金属沉积。 通过范德华接触获得的高质量金属-半导体界面使得基于Au-InSe肖特基势垒的高质量肖特基二极管得以制造。 我们的实验观察表明，由于InSe和石墨的电子亲和力相似，石墨-InSe界面的接触势垒可以忽略不计，而Au-InSe界面则由较大的肖特基势垒主导。 显示英文摘要

摘要： Two-dimensional semiconductors are excellent candidates for next-generation electronics and optoelec-tronics thanks to their electrical properties and strong light-matter interaction. To fabricate devices with optimal electrical properties, it is crucial to have both high-quality semiconducting crystals and ideal con-tacts at metal-semiconductor interfaces. Thanks to the mechanical exfoliation of van der Waals crystals, atomically-thin high-quality single-crystals can easily be obtained in a laboratory. However, conventional metal deposition techniques can introduce chemical disorder and metal-induced mid-gap states that induce Fermi level pinning and can degrade the metal-semiconductor interfaces, resulting in poorly performing devices. In this article, we explore the electrical contact characteristics of Au-InSe and graphite-InSe van der Waals contacts, obtained by stacking mechanically exfoliated InSe flakes onto pre-patterned Au or graphite electrodes without the need of lithography or metal deposition. The high quality of the metal-semiconductor interfaces obtained by van der Waals contact allows to fabricate high-quality Schottky di-odes based on the Au-InSe Schottky barrier. Our experimental observation indicates that the contact barrier at the graphite-InSe interface is negligible due to the similar electron affinity of InSe and graphite, while the Au-InSe interfaces are dominated by a large Schottky barrier.