标题： 半导体纳米片光致发光的复杂扩散动力学 显示英文标题

标题： Complex diffusion-based kinetics of photoluminescence in semiconductor nanoplatelets

摘要： 我们提出了一种基于扩散的模拟和理论模型，用于解释半导体纳米板中的光致发光（PL）发射强度。 结果显示，PL强度曲线的形状可以通过激子的复合、扩散和捕获之间的相互作用来再现。 在短时间内的发射强度完全是指数形式的，由复合决定。 在长时间范围内，它由激子从表面陷阱中的释放所控制，并表现出幂律尾部。 我们表明，从一个极限到另一个极限的转换由扩散特性控制。 这个中间区域表现出丰富的行为，具体取决于扩散率的值。 所提出的的方法能够再现不同纳米板系统实验曲线的所有特征。 显示英文摘要

摘要： We present a diffusion-based simulation and theoretical models for explanation of photoluminescence (PL) emission intensity in semiconductor nanoplatelets. It is shown that the shape of PL intensity curves can be reproduced by the interplay of recombination, diffusion and trapping of excitons. The emission intensity at short times is purely exponential and is defined by recombination. At long times it is governed by the release of excitons from surface traps and is characterized by a power-law tail. We show that the crossover from one limit to another is controlled by diffusion properties. This intermediate region exhibits a rich behaviour depending on the value of diffusivity. Proposed approach reproduces all the features of experimental curves measured for different nanoplatelet systems.