标题： 理解受控击穿过程中的电导和纳米孔形成 显示英文标题

标题： Understanding Electrical Conduction and Nanopore Formation During Controlled Breakdown

摘要： 可控击穿最近已成为一种极具吸引力的技术，用于制造固态纳米孔，适用于各种生物传感应用。 该技术依赖于在膜上施加约0.6-1 V/nm的电场以引发电流，最终导致介电材料的击穿。 然而，关于在可控击穿过程中通过介电材料的电流传导机制的详细描述尚未有报道。 在此，我们研究了在可控击穿过程中SiN$_x$膜中的电流传导和纳米孔形成。 我们表明，根据膜的化学计量比，电流传导受限于膜-电解质界面发生的氧化反应（富硅的SiN$_x$），或者通过介电材料的电子传输（化学计量比的Si$_3$N$_4$）。 我们提供了理解这一过程所带来的几个重要启示，这将有助于在未来几年进一步发展可控击穿技术，特别是将该技术扩展到与芯片上的纳米结构集成。 显示英文摘要

摘要： Controlled breakdown has recently emerged as a highly appealing technique to fabricate solid-state nanopores for a wide range of biosensing applications. This technique relies on applying an electric field of approximately 0.6-1 V/nm across the membrane to induce a current, and eventually, breakdown of the dielectric. However, a detailed description of how electrical conduction through the dielectric occurs during controlled breakdown has not yet been reported. Here, we study electrical conduction and nanopore formation in SiN$_x$ membranes during controlled breakdown. We show that depending on the membrane stoichiometry, electrical conduction is limited by either oxidation reactions that must occur at the membrane-electrolyte interface (Si-rich SiN$_x$), or electron transport across the dielectric (stoichiometric Si$_3$N$_4$). We provide several important implications resulting from understanding this process which will aid in further developing controlled breakdown in the coming years, particularly for extending this technique to integrate nanopores with on-chip nanostructures.